Volume 18, Issue 2 (June 2021)                   IJMSE 2021, 18(2): 0-0 | Back to browse issues page


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Gouitaa N, Taj-dine L, Lamfaddal B, Farid A, Ounacer M, Sajieddine M. The Study of Structure and Transitional Phases in B0.95Bi0.05Ti1-xFexO3 Ceramics Synthesized by Solid State Route. IJMSE. 2021; 18 (2)
URL: http://ijmse.iust.ac.ir/article-1-2058-en.html
Abstract:   (828 Views)
    The structural and dielectric properties of iron and bismuth co-substituted BaTiO3 ceramic with the formula: B0.95Bi0.05Ti1-xFexO3 for x=0.00 to 1.00, synthesis with solid state route, were characterized.     The X-ray diffraction results show a tetragonal phase for x=0.00. While for x=0.40 to 0.80 we observed a coexistence of tree phase tetragonal, hexagonal and pseudo-cubic. And at x=1.00 only the pseudo-cubic phase is present and the other phase disappeared. The Raman results indicate the existence of tetragonal band for x≤0.40, and an appearance of characteristic bands of Fe3+ ions for more than 0.40 of Fe content. The SEM micrographs show an increase in grain size with the increase of Fe content and it reaches a maximum at x=0.40.  And the Mossbauer spectroscopy indicates that our samples is paramagnetic at room temperature and that the Fe is   oxidized under Fe3+ with no existence of Fe2+ and Fe4+ ions. The temperature dependence of dielectric permittivity was investigated in the frequency range from 20 Hz to 2MHz. The results show three dielectric relaxation phase transitions from a rhombohedral ferroelectric to orthorhombic ferroelectric (TR-O) then to a tetragonal ferroelectric phase (at TO-T), and finally to cubic paraelectric at the Curie temperature (TC).  In addition, the temperature of phase transition shifted to the lower temperature with the increase of Fe content for all the phase transitions. And the maximum of dielectric permittivity increases for TR-O while for TT-O and Tm phases transitions, it reaches a maximum at x=0.60 and x=0.80 respectively and then decreases.
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Type of Study: Research Paper | Subject: Ceramics

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