Volume 14, Issue 2 (June 2018)                   IJEEE 2018, 14(2): 170-177 | Back to browse issues page

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Ashraf M. Switched-Capacitor Dynamic Threshold PMOS (SC-DTPMOS) Transistor for High Speed Sub-threshold Applications. IJEEE 2018; 14 (2) :170-177
URL: http://ijeee.iust.ac.ir/article-1-1122-en.html
Switched-Capacitor Dynamic Threshold PMOS (SC-DTPMOS) Transistor for High Speed Sub-threshold Applications
M. Ashraf
Abstract:   (4074 Views)
This work studies the effects of dynamic threshold design techniques on the speed and power of digital circuits. A new dynamic threshold transistor structure has been proposed to improve performances of digital circuits. The proposed switched-capacitor dynamic threshold PMOS (SC-DTPMOS) scheme employs a capacitor along with an NMOS switch in order to effectively reduce the threshold voltage of a PMOS transistor. The proposed structure improves the propagation delay of a circuit and is much suitable for those circuits with high switching factor. Post layout simulation results using TSMC 180 nm CMOS technology at 0.2V supply voltage shows 45% improvement in delay as well as 25% less power consumption at the cost of only 53% more occupied area.
Keywords: Low Power , High Speed , Sub-Threshold , Body Biasing , Dynamic Threshold
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Type of Study: Research Paper | Subject: Integrated Circuits: Digital, Analog
Received: 2017/07/08 | Revised: 2018/06/17 | Accepted: 2017/12/19
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Creative Commons License This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.
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© 2022 by the authors. Licensee IUST, Tehran, Iran. This is an open access journal distributed under the terms and conditions of the Creative Commons Attribution-NonCommercial 4.0 International (CC BY-NC 4.0) license.