Publications:

  a) Since January 2008

  Mirmansour Ziabari, Ahmad Mohades Kassai, Shahin Enayati Maklavani and Amirkoushyar Ziabari

  A Prospect for Future Generation of Quantum Dots in Computers, Journal of Applied Sciences, 8(10):

  1841-1849, 2008

  Mirmansour Ziabari, Ahmad Mohades Kassai, Amirkoushyar Ziabari and Shahin Enayati Maklavani,

  Designing a Hamming Coder/Decoder Using QCAs. Journal of Applied Sciences 8(14): 2569-2576, 2008

  b) Prior to 2008

  A Mohades-Kassai, M R Brozel, R Murray and R C Newman. Compensation in MBE Grown GaAs Doped

  with Silicon and Beryllium, International Symposium on GaAs and Related Compounds, Karuizawa, Japan,

  Institute of Physics Conference Series No. 106, 471-476, 1989.

  A Mohades-Kassai and M R Brozel. Reverse Contrast Imaging in Gallium Arsenide, Journal of Crystal Growth

  Vol. 103,303-310, 1990.

  R Murray, R C Newman, R S Leigh, R B Beall, J J Harris, M R Brozel, A Mohades-Kassai and M Goulding. Fano Profiles of Absorption Lines from the Localized Vibrational Modes of Beryllium Acceptors in GaAs and Boron Acceptors in Silicon, Semiconductor Science and Technology, Vol. 4, 423-426, 1989.

  R Addinal, R C Newman, I T Ferguson, A Mohades-Kassai, M R Brozel, V K M Sharma, D McPhail and M J L Sangster. Localized Vibrational Mode Absorption of Silicon Donors and Beryllium Acceptors in MBE GaAs, InAs and InSb, Materials Science Forum, Vol. 83-87, 1027-1032, 1992.

  L Breivik, M R Brozel, A Mohades-Kassai and J M Langer. Photo-Quenching of Low Temperature, Near-Bandgap Absorption (Reverse Contrast) of SI LEC GaAs, Sixth Conference Semi-insulating 111-V Materials, Toronto, Canada, 257-262, 1990.

  A Mohades-Kassai and M R Brozel. Defect Recognition and Image Processing in Semiconductors, presented in the Third Symposium of Defect Recognition and Image Processing Conference in Gakushuin University, Japan, 1989. Also published in the Journal of Crystal Growth, 1989.

  A Mohades-Kassai. Photoluminescence of Electrochemically-oxidized Porous Silicon Layer, proceedings at the Third Iranian Conference on Electrical Engineering, Iran University of Science and Technology, 19-25, 15-18 May, 1995.

  M Beaudion, S R Johnson, A J G Devries, A Mohades-Kassai and T Tiedje. Temperature Dependence of the Optical Absorption Edge in Indium Phosphide, presented at the Symposium of Material Research Society, California, United States, 1996.

  A Mohades-Kassai, T Tiedje, S Johnson, M Beaudoin, T Pinnington and J Mckenzie. Growth of High Quality P-type GaAs Epitaxial Layers Using Carbon Tetrachloride by Molecular Beam Epitaxy, presented at the Twenty-third Condensed Matter Seminar, Department of Physics, University of British Columbia, Jan. 1996.

  A Ballestad, M Beaudoin, D Hawes, N Laman, A Mohades-Kassai and T Tiedje. Optical and Electrical Measurements on InGaAs Substrates, presented at the Twenty-third Condensed Matter Seminar, Department of Physics, University of British Columbia, Jan. 1996.

  A Mohades-Kassai, M Beaudoin, J Booth, T Pinnington, J Mckenzie and T Tiedje. Temperature Dependence of the Optical Bank Gap of Silicon, presented at the Twenty-third Condensed Matter Seminar, Department of Physics, University of British Columbia, Jan. 1996.

  M Mohammadkhani, M Samkan and A Mohades-Kassai. Electron Mobility Enhancement in GaAs Using In as a Dopant in Molecular Beam Epitaxy, Ninth Iranian Conference on Electrical Engineering, ICEE 2001, 35-1, 2001.

  A Mohades-Kassai. Growth and Characterization of Doped and Undoped GaAs Layers by Molecular Beam Epitaxy, International Journal of Engineering Science, Iran University of Science & Technology Publication, No. Vol. 2001.

  A Mohades-Kassai and M Mohammadkhani. Silicon Incorporation Dependence on As4GA Flux Ratio in Molecular Beam Epitaxy, International Journal of Engineering Science, Iran University of Science & Technology Publication, No. 4, Vol2, 2001.

  A Mohades-Kassai. Compensation in MBE Grown GaAs Doped with Silicon and Berullium, The Twelfth International Conference on Microelectronics ICM 2000, Tehran, Oct.31 - Nov.2, 2000,341-4.

  A Mohades-Kassai and H R Soufi. Design and Fabrication of High Accuracy GaAs Hall Effect Sensor Grown by Molecular Beam Epitaxy, the Twelfth International Conference on Microelectronics, ICM 2000, Tehran, Oct. 31 – Nov.2, 2000,345-8.

  M Samkan, M Mohammadkhani, H Hamidi and A Mohades-Kassai. Design and Fabrication of a Schottky Diode with GaAs Semiconductor and Al Expitaxially Grown as Metal Contact, Proceedings of the Ninth Iranian Conference on Electrical Engineering, ICEE 2001, 44-9.