<?xml version="1.0" encoding="utf-8"?>
<journal>
<title>IRANIAN JOURNAL OF ELECTRICAL AND ELECTRONIC ENGINEERING</title>
<title_fa></title_fa>
<short_title>IJEEE</short_title>
<subject>Engineering &amp; Technology</subject>
<web_url>http://ijeee.iust.ac.ir</web_url>
<journal_hbi_system_id>18</journal_hbi_system_id>
<journal_hbi_system_user>agent2</journal_hbi_system_user>
<journal_id_issn>1735-2827</journal_id_issn>
<journal_id_issn_online>1735-2827</journal_id_issn_online>
<journal_id_pii></journal_id_pii>
<journal_id_doi></journal_id_doi>
<journal_id_iranmedex></journal_id_iranmedex>
<journal_id_magiran></journal_id_magiran>
<journal_id_sid></journal_id_sid>
<journal_id_nlai></journal_id_nlai>
<journal_id_science></journal_id_science>
<language>en</language>
<pubdate>
	<type>jalali</type>
	<year>1389</year>
	<month>3</month>
	<day>1</day>
</pubdate>
<pubdate>
	<type>gregorian</type>
	<year>2010</year>
	<month>6</month>
	<day>1</day>
</pubdate>
<volume>6</volume>
<number>2</number>
<publish_type>online</publish_type>
<publish_edition>1</publish_edition>
<article_type>fulltext</article_type>
<articleset>
	<article>


	<language>en</language>
	<article_id_doi></article_id_doi>
	<title_fa>Natural Frequencies, Pull-in Voltage, Retrograde Channel, Resonant Suspended Gate (RSG) MOSFET.</title_fa>
	<title>Design of a Resonant Suspended Gate MOSFET with Retrograde Channel Doping</title>
	<subject_fa>2-Electronic Devices</subject_fa>
	<subject>Electronic Devices</subject>
	<content_type_fa>Research Paper </content_type_fa>
	<content_type>Research Paper </content_type>
	<abstract_fa></abstract_fa>
	<abstract>High Q frequency reference devices are essential components in many Integrated
circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate
in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device
has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde
channel and Gaussian retrograde channels have been investigated.</abstract>
	<keyword_fa></keyword_fa>
	<keyword>Natural Frequencies,Pull-in Voltage,Retrograde Channel,Resonant Suspended Gate (RSG) MOSFET,</keyword>
	<start_page>77</start_page>
	<end_page>83</end_page>
	<web_url>http://ijeee.iust.ac.ir/browse.php?a_code=A-10-222-2&amp;slc_lang=en&amp;sid=1</web_url>


<author_list>
	<author>
	<first_name>M.</first_name>
	<middle_name></middle_name>
	<last_name>Fathipour</last_name>
	<suffix></suffix>
	<first_name_fa></first_name_fa>
	<middle_name_fa></middle_name_fa>
	<last_name_fa></last_name_fa>
	<suffix_fa></suffix_fa>
	<email></email>
	<code>180031947532846001055</code>
	<orcid>180031947532846001055</orcid>
	<coreauthor>No</coreauthor>
	<affiliation></affiliation>
	<affiliation_fa></affiliation_fa>
	 </author>


	<author>
	<first_name>M. H. </first_name>
	<middle_name></middle_name>
	<last_name>Refan</last_name>
	<suffix></suffix>
	<first_name_fa></first_name_fa>
	<middle_name_fa></middle_name_fa>
	<last_name_fa></last_name_fa>
	<suffix_fa></suffix_fa>
	<email></email>
	<code>180031947532846001066</code>
	<orcid>180031947532846001066</orcid>
	<coreauthor>Yes
</coreauthor>
	<affiliation></affiliation>
	<affiliation_fa></affiliation_fa>
	 </author>


	<author>
	<first_name>S. M. </first_name>
	<middle_name></middle_name>
	<last_name>Ebrahimi</last_name>
	<suffix></suffix>
	<first_name_fa></first_name_fa>
	<middle_name_fa></middle_name_fa>
	<last_name_fa></last_name_fa>
	<suffix_fa></suffix_fa>
	<email></email>
	<code>180031947532846001069</code>
	<orcid>180031947532846001069</orcid>
	<coreauthor>No</coreauthor>
	<affiliation></affiliation>
	<affiliation_fa></affiliation_fa>
	 </author>


</author_list>


	</article>
</articleset>
</journal>
