Research in Progress:

  Assessment, determination and characterization of defects in Gallium Arsenide wafers prepared for device fabrications.

  Design and fabrication of Schottky diodes using epitaxially grown Aluminium on Gallium Arsenide.

  Articles Reviewed:

  A M Dabiran and P I Cohen. Reflection High Energy Electron Diffraction Studies of the Growth Kinetics of AlAs (100).

  A Adibi, H Bouzari and E Najafi Aghadam. Optimal Design of GaAs-MESFET Low-Phase Noise Oscillators.

  Bahram Roughani and H E Jackson. Raman Scattering Investigation of Silicon Doped Gallium Arsenide Surfaces.

  B Taheri, B Jasemnejad, R J Reeves, B Shakib and R C Powell. Ultrafast Characterization of Mn Doped 11-V1 Semiconductors and their Application for Optical Switching and Computing.

  R Ghayour. Mobility Modeling of Short Channel MOSFET for CAD of VLSI.

  A Simionescu, and G Hobler. Monte Carlo Simulation of Ion Implantation in Silicon.

  S Senkader , J Esfandyari, G Hobler, H Potzl and B Murphy. Simulation of Oxygen Precipitation in Silicon.

  H Arab Tafti, V S Sheeba, P R Vaya and F F Papa. Circuit Simulation of the Quantum Well Lasers