Journal & Conference Paper: 1. A. Mohades-Kassai, Growth and Characterization of Doped and Undoped GaAs Layers Grown by Molecular Beam Epitaxy, International Journal of Engineering Science, Iran University of Science and Technology Publication, no.4, vol.2, pp301-4, 2001. 2. A. Mohades-Kassai, M. Mohammadkhani, Silicon Incorporation Dependence on As4/Ga Flux Ratio in Molecular Beam Epitaxy, International Journal of Engineering Science, Iran University of Science and Technology Publication, no.2, vol.1, pp116-20, 2001. 3. A. Mohades-Kassai, Compensation in MBE Grown GaAs Doped with Silicon and Beryllium, The 12th International Conference on Microelectronics ICM 2000 Tehran, Oct.31–Nov.2, pp341–4, 2000. 4. A. Mohades-Kassai, H. R. Soufi, Design and Fabrication of High Accuracy GaAs Hall Effect Sensor Grown by Molecular Beam Epitaxy, The 12th International Conference on Microelectronics ICM 2000 Tehran, Oct.31–Nov.2, pp345–8, 2000. 5. M. Mohammadkhani, M. Samkan, A. Mohades-Kassai, Electron Mobility Enhancement in GaAs Using In as a Dopant in GaAs Grown by Molecular Beam Epitaxy, The 9th Iranian Conference on Electrical Engineering, ICEE 2001, pp31-5, 2001. 6. M. Samkan, M. Mohammadkhani, H. Hamidi, A. Mohades-Kassai, Design and Fabrication of a Schottky Diode with GaAs Semiconductor and Al Expitaxially Grown as Metal Contact, The 9th Iranian Conference on Electrical Engineering, ICEE 2001, pp41-44, 2001. |
